transistor - перевод на русский
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transistor - перевод на русский

Найдено результатов: 176
transistor         
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  • [[John Bardeen]], [[William Shockley]] and [[Walter Brattain]] at [[Bell Labs]] in 1948. Bardeen and Brattain invented the [[point-contact transistor]] in 1947 and Shockley the [[bipolar junction transistor]] in 1948.
  • [[Herbert Mataré]] (seen here in 1950) independently invented a point-contact transistor in June 1948
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  • [[Julius Edgar Lilienfeld]] proposed the concept of a [[field-effect transistor]] in 1925.
  • Soviet [[KT315]]b transistors
  • gate]] (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).
  • Amplifier circuit, common-emitter configuration with a voltage-divider bias circuit
  • A replica of the first working transistor, a [[point-contact transistor]] invented in 1947
  • V<sub>g</sub>}} curve. At first, when no gate voltage is applied, there are no inversion electrons in the channel, so the device is turned off. As gate voltage increases, the inversion electron density in the channel increases, current increases, and thus the device turns on.
  • Assorted discrete transistors
  • BJT used as an electronic switch, in grounded-emitter configuration
  • Transistor symbol created on [[Portuguese pavement]] in the [[University of Aveiro]]
A SEMICONDUCTOR DEVICE
Transistors; Transistorized; Redifine your concepts about Transistor; Collector (electronics); Discrete transistor; Silicon transistor; Transistor Outline; Electronic transistors; Draft:Transistor Electronics
транзистор
transistor         
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  • 80px
  • [[John Bardeen]], [[William Shockley]] and [[Walter Brattain]] at [[Bell Labs]] in 1948. Bardeen and Brattain invented the [[point-contact transistor]] in 1947 and Shockley the [[bipolar junction transistor]] in 1948.
  • [[Herbert Mataré]] (seen here in 1950) independently invented a point-contact transistor in June 1948
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • [[Julius Edgar Lilienfeld]] proposed the concept of a [[field-effect transistor]] in 1925.
  • Soviet [[KT315]]b transistors
  • gate]] (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).
  • Amplifier circuit, common-emitter configuration with a voltage-divider bias circuit
  • A replica of the first working transistor, a [[point-contact transistor]] invented in 1947
  • V<sub>g</sub>}} curve. At first, when no gate voltage is applied, there are no inversion electrons in the channel, so the device is turned off. As gate voltage increases, the inversion electron density in the channel increases, current increases, and thus the device turns on.
  • Assorted discrete transistors
  • BJT used as an electronic switch, in grounded-emitter configuration
  • Transistor symbol created on [[Portuguese pavement]] in the [[University of Aveiro]]
A SEMICONDUCTOR DEVICE
Transistors; Transistorized; Redifine your concepts about Transistor; Collector (electronics); Discrete transistor; Silicon transistor; Transistor Outline; Electronic transistors; Draft:Transistor Electronics

[træn'zistə]

общая лексика

транзистор

электронный прибор, на котором строится логика интегральной микросхемы. Изобретён 23 декабря 1947 г. Джоном Бардином (John Bardeen), Уолтером Брэттеном (Walter Brattain) и Уильям Шокли (William Shockley) из Bell Laboratories. Свое имя (TRANSfer resiSTOR) он получил в 1948 г. от Уильяма Шокли в сентябрьском 1948 г. выпуске журнала Electronics

кристаллический триод

полупроводниковый

полупроводниковый прибор

полупроводниковый транзистор

полупроводниковый триод

транзисторный

существительное

общая лексика

транзистор, кристаллический триод

электроника

транзистор

кристаллический триод

разговорное выражение

транзисторный радиоприёмник

собирательное выражение

транзисторный радиоприемник

transistor         
  • 80px
  • 80px
  • [[John Bardeen]], [[William Shockley]] and [[Walter Brattain]] at [[Bell Labs]] in 1948. Bardeen and Brattain invented the [[point-contact transistor]] in 1947 and Shockley the [[bipolar junction transistor]] in 1948.
  • [[Herbert Mataré]] (seen here in 1950) independently invented a point-contact transistor in June 1948
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • [[Julius Edgar Lilienfeld]] proposed the concept of a [[field-effect transistor]] in 1925.
  • Soviet [[KT315]]b transistors
  • gate]] (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).
  • Amplifier circuit, common-emitter configuration with a voltage-divider bias circuit
  • A replica of the first working transistor, a [[point-contact transistor]] invented in 1947
  • V<sub>g</sub>}} curve. At first, when no gate voltage is applied, there are no inversion electrons in the channel, so the device is turned off. As gate voltage increases, the inversion electron density in the channel increases, current increases, and thus the device turns on.
  • Assorted discrete transistors
  • BJT used as an electronic switch, in grounded-emitter configuration
  • Transistor symbol created on [[Portuguese pavement]] in the [[University of Aveiro]]
A SEMICONDUCTOR DEVICE
Transistors; Transistorized; Redifine your concepts about Transistor; Collector (electronics); Discrete transistor; Silicon transistor; Transistor Outline; Electronic transistors; Draft:Transistor Electronics
transistor noun 1) транзистор, кристаллический триод 2) coll. транзисторный радиоприёмник (тж. transistor radio)
transistorized         
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  • 80px
  • [[John Bardeen]], [[William Shockley]] and [[Walter Brattain]] at [[Bell Labs]] in 1948. Bardeen and Brattain invented the [[point-contact transistor]] in 1947 and Shockley the [[bipolar junction transistor]] in 1948.
  • [[Herbert Mataré]] (seen here in 1950) independently invented a point-contact transistor in June 1948
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • [[Julius Edgar Lilienfeld]] proposed the concept of a [[field-effect transistor]] in 1925.
  • Soviet [[KT315]]b transistors
  • gate]] (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).
  • Amplifier circuit, common-emitter configuration with a voltage-divider bias circuit
  • A replica of the first working transistor, a [[point-contact transistor]] invented in 1947
  • V<sub>g</sub>}} curve. At first, when no gate voltage is applied, there are no inversion electrons in the channel, so the device is turned off. As gate voltage increases, the inversion electron density in the channel increases, current increases, and thus the device turns on.
  • Assorted discrete transistors
  • BJT used as an electronic switch, in grounded-emitter configuration
  • Transistor symbol created on [[Portuguese pavement]] in the [[University of Aveiro]]
A SEMICONDUCTOR DEVICE
Transistors; Transistorized; Redifine your concepts about Transistor; Collector (electronics); Discrete transistor; Silicon transistor; Transistor Outline; Electronic transistors; Draft:Transistor Electronics

[træn'zistəraizd]

прилагательное

электроника

транзисторный

собранный на транзисторах

silicon transistor         
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  • 80px
  • [[John Bardeen]], [[William Shockley]] and [[Walter Brattain]] at [[Bell Labs]] in 1948. Bardeen and Brattain invented the [[point-contact transistor]] in 1947 and Shockley the [[bipolar junction transistor]] in 1948.
  • [[Herbert Mataré]] (seen here in 1950) independently invented a point-contact transistor in June 1948
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • 80px
  • [[Julius Edgar Lilienfeld]] proposed the concept of a [[field-effect transistor]] in 1925.
  • Soviet [[KT315]]b transistors
  • gate]] (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (pink).
  • Amplifier circuit, common-emitter configuration with a voltage-divider bias circuit
  • A replica of the first working transistor, a [[point-contact transistor]] invented in 1947
  • V<sub>g</sub>}} curve. At first, when no gate voltage is applied, there are no inversion electrons in the channel, so the device is turned off. As gate voltage increases, the inversion electron density in the channel increases, current increases, and thus the device turns on.
  • Assorted discrete transistors
  • BJT used as an electronic switch, in grounded-emitter configuration
  • Transistor symbol created on [[Portuguese pavement]] in the [[University of Aveiro]]
A SEMICONDUCTOR DEVICE
Transistors; Transistorized; Redifine your concepts about Transistor; Collector (electronics); Discrete transistor; Silicon transistor; Transistor Outline; Electronic transistors; Draft:Transistor Electronics

общая лексика

кремниевый транзистор

кремниевый полупроводниковый триод

transistor-transistor logic         
  • Standard TTL NAND with a "totem-pole" output stage, one of four in 7400
  • A real-time clock built of TTL chips around 1979
  • Two-input TTL [[NAND gate]] with a simple output stage (simplified)
CLASS OF DIGITAL CIRCUITS BUILT FROM BIPOLAR JUNCTION TRANSISTORS (BJTS) AND RESISTORS; TRANSISTORS PERFORM BOTH THE LOGIC FUNCTION (E.G. AND) AND THE AMPLIFYING FUNCTION
Transistor transistor logic; Transistor-transistor logic; LVTTL; Transistor Transistor Logic; FJ series; TTL logic; Transistor-to-transistor logic; Transistor-coupled transistor logic; TCTL; TTL (electronics); TTL (logic)

общая лексика

ТТЛ

транзисторно-транзисторная логика

вычислительная техника

логика транзистор-транзисторная

drift transistor         
TYPE OF BIPOLAR JUNCTION TRANSISTOR
Drift transistor; Graded-base transistor; Graded base transistor

общая лексика

дрейфовый транзистор

unipolar transistor         
  • FET conventional symbol types
  • Insulator}} Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
  • I–V characteristics and output plot of a JFET n-channel transistor.
  • [[Julius Edgar Lilienfeld]] proposed the concept of a field-effect transistor in 1925.
  • Cross section of an n-type MOSFET
  • Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel [[nanowire]] [[MOSFET]]. Note that the [[threshold voltage]] for this device lies around 0.45&nbsp;V.
TRANSISTOR THAT USES AN ELECTRIC FIELD TO CONTROL ITS ELECTRICAL BEHAVIOUR
Field-effect transistors; Field-Effect Transistor; Field Effect Transistor; Depletion mode transistor; Depletion-mode transistor; FREDFET; Gate (transistor); Field effect transistor; Field effect transistors; Unipolar transistor; Unipolar transistors; Transistor channel; Channel (transistors); Drain (transistor); Source (transistor); Substrate (transistor); Bulk (transistor); FET (transistor); Body (transistor); Channel (transistor); FET; Depletion Mode Transistor; Fast-reverse epitaxial diode field-effect transistor; Fast-recovery epitaxial diode field-effect transistor; Channel (semiconductor); Gate electrode; P-channel; N-channel; Gate (FET); Drain (FET); Source (FET)

общая лексика

униполярный транзистор

FET         
  • FET conventional symbol types
  • Insulator}} Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
  • I–V characteristics and output plot of a JFET n-channel transistor.
  • [[Julius Edgar Lilienfeld]] proposed the concept of a field-effect transistor in 1925.
  • Cross section of an n-type MOSFET
  • Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel [[nanowire]] [[MOSFET]]. Note that the [[threshold voltage]] for this device lies around 0.45&nbsp;V.
TRANSISTOR THAT USES AN ELECTRIC FIELD TO CONTROL ITS ELECTRICAL BEHAVIOUR
Field-effect transistors; Field-Effect Transistor; Field Effect Transistor; Depletion mode transistor; Depletion-mode transistor; FREDFET; Gate (transistor); Field effect transistor; Field effect transistors; Unipolar transistor; Unipolar transistors; Transistor channel; Channel (transistors); Drain (transistor); Source (transistor); Substrate (transistor); Bulk (transistor); FET (transistor); Body (transistor); Channel (transistor); FET; Depletion Mode Transistor; Fast-reverse epitaxial diode field-effect transistor; Fast-recovery epitaxial diode field-effect transistor; Channel (semiconductor); Gate electrode; P-channel; N-channel; Gate (FET); Drain (FET); Source (FET)

общая лексика

Field Effect Transistor

полевой транзистор

существительное

общая лексика

Федеральный акцизный сбор (США)

синоним

Federal Excise Tax

field-effect transistor         
  • FET conventional symbol types
  • Insulator}} Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
  • I–V characteristics and output plot of a JFET n-channel transistor.
  • [[Julius Edgar Lilienfeld]] proposed the concept of a field-effect transistor in 1925.
  • Cross section of an n-type MOSFET
  • Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel [[nanowire]] [[MOSFET]]. Note that the [[threshold voltage]] for this device lies around 0.45&nbsp;V.
TRANSISTOR THAT USES AN ELECTRIC FIELD TO CONTROL ITS ELECTRICAL BEHAVIOUR
Field-effect transistors; Field-Effect Transistor; Field Effect Transistor; Depletion mode transistor; Depletion-mode transistor; FREDFET; Gate (transistor); Field effect transistor; Field effect transistors; Unipolar transistor; Unipolar transistors; Transistor channel; Channel (transistors); Drain (transistor); Source (transistor); Substrate (transistor); Bulk (transistor); FET (transistor); Body (transistor); Channel (transistor); FET; Depletion Mode Transistor; Fast-reverse epitaxial diode field-effect transistor; Fast-recovery epitaxial diode field-effect transistor; Channel (semiconductor); Gate electrode; P-channel; N-channel; Gate (FET); Drain (FET); Source (FET)

машиностроение

транзистор канальный

полевой транзистор

Определение

transistor

Википедия

Transistor

Transistor (рус. Транзистор) — четвёртый студийный альбом американской группы альтернативного рока 311, вышедший в 1997 году.

https://ru.wikipedia.org/wiki/Transistor
Как переводится transistor на Русский язык
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